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| Philips Semiconductors Product specification Silicon Diffused Power Transistor BUW14 GENERAL DESCRIPTION High-voltage, high-speed, glass passivated npn power transistor in a SOT82 envelope intended for use in converters, inverters, switching regulators, motor control systems and switching applications. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Fall time CONDITIONS VBE = 0 V TYP. 0.4 MAX. 1000 450 0.5 1 20 UNIT V V A A W s Tmb 60 C PINNING - SOT82 PIN 1 2 3 DESCRIPTION emitter collector base PIN CONFIGURATION SYMBOL c b 1 2 3 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1000 450 0.5 1 0.2 0.3 0.3 20 150 150 UNIT V V A A A A A W C C Tmb 60 C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Junction to mounting base Junction to ambient CONDITIONS in free air TYP. 100 MAX. 4.5 UNIT K/W K/W 1 Turn-off current. March 1992 1 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUW14 STATIC CHARACTERISTICS Tmb = 25 C unless otherwise specified SYMBOL ICES ICES IEBO VCEOsust VCEsat VCEsat VBEsat hFE hFE PARAMETER Collector cut-off current 2 CONDITIONS VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 C VEB = 5 V; IC = 0 A IB = 0 A; IC = 100 mA; L = 25 mH IC = 0.1 A; IB = 10 mA IC = 0.2 A; IB = 20 mA IC = 0.2 A; IB = 20 mA IC = 50 mA; VCE = 5 V IC = 300 mA; VCE = 5 V MIN. 450 25 TYP. 50 50 MAX. 100 1.0 1.0 0.8 1.0 1.0 100 UNIT A mA mA V V V V Emitter cut-off current Collector-emitter sustaining voltage Collector-emitter saturation voltages Base-emitter saturation voltage DC current gain DYNAMIC CHARACTERISTICS Tmb = 25 C unless otherwise specified SYMBOL fT PARAMETER Transition frequency CONDITIONS IC = 0.2 A; VCE = 10 V; f = 1 MHz TYP. 20 MAX. UNIT MHz s s s s ton ts tf tf Switching times (resistive load circuit) ICon = 0.2 A; IBon = 20 mA; -IBoff = 40 mA; VCC = 250 V Turn-on time Turn-off storage time Turn-off fall time Turn-off fall time Tmb = 95 C 0.4 3.5 0.4 - 0.7 5.0 1.3 IC / mA + 50v 100-200R 250 Horizontal Oscilloscope Vertical 300R 30-60 Hz 6V 1R 200 100 0 VCE / V min VCEOsust Fig.1. Test circuit for VCEOsust. Fig.2. Oscilloscope display for VCEOsust. 2 Measured with half sine-wave voltage (curve tracer). March 1992 2 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUW14 VCC 1000 hFE BUW14 RL VIM 0 tp T RB T.U.T. 100 5V 1V 10 Tj = 25 C Tj = 125 C 1 0.01 0.1 IC / A 1 Fig.3. Test circuit resistive load. VIM = -6 to +8 V VCC = 150 V; tp = 20 s; = tp / T = 0.01. RB and RL calculated from ICon and IBon requirements. ICon Fig.6. Typical DC current gain. hFE = f(IC) parameter VCE 90 % 90 % 10 VCESAT / V BUW14 Tj = 25 C Tj = 125 C IC 10 % ts ton toff IBon 10 % tr 30ns tf 1 0.1 A 0.1 0.2 A IB IC=0.05 A 0.01 0.001 -IBoff 0.01 IB / A 0.1 1.0 Fig.4. Switching times waveforms with resistive load. Fig.7. Typical collector-emitter saturation voltage. VCEsat = f(IB); parameter IC VBESAT / V Tj = 25 C Tj = 125 C BUW14 120 110 100 90 80 70 60 50 40 30 20 10 0 PD% Normalised Power Derating 1 0.9 0.8 0.7 0.6 0.5 0.4 IC= 50 mA 100 mA 200 mA 0 0.04 0.08 0.12 IB / A 0.16 0.2 0 20 40 60 80 100 Tmb / C 120 140 Fig.5. Normalised power dissipation. PD% = 100PD/PD 25C = f (Tmb) Fig.8. Typical base-emitter saturation voltage. VBEsat = f(IB); parameter IC March 1992 3 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUW14 Fig.9. Forward bias safe operating area. (1) Ptot max line. (2) Second-breakdown limits. I Region of permissible DC operation. II Permissible extension for repetitive pulse operation. III Area of permissible operation during turn-on in single transistor converters, provided RBE 100 and tp 0.6 s. IV Repetitive pulse operation in this region is permissible provided VBE 0 and tp 2 ms. Fig.10. Transient thermal impedance. Zth j-mb = f(t); parameter = duty cycle. March 1992 4 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUW14 MECHANICAL DATA Dimensions in mm Net Mass: 0.8 g mounting base 2.8 2.3 7.8 max 3.75 3.1 2.5 11.1 max 1) 2.54 max 1.2 15.3 min 1 4.58 0.5 2 3 2.29 1) Lead dimensions within this zone uncontrolled. 0.88 max Fig.11. SOT82; pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for SOT82 envelopes. 2. Epoxy meets UL94 V0 at 1/8". March 1992 5 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUW14 DEFINITIONS Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. March 1992 6 Rev 1.000 |
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